RU6010H n-channel advanced power mosfet symbol rating unit v dss 60 v gss 20 t j 150 c t stg -55 to 150 c i s t a =25c 2.9 a i dp t a =25c 40 a t a =25c 10 t a =70c 8.1 t a =25c 2.5 t a =70c 1.6 r ? jc -c/w r ? ja 50 c/w e a s tbd mj ruichips semiconductor co., ltd rev. a? mar., 2016 1 www.ruichips.com 300 s pulse drain current tested thermal resistance-junction to case thermal resistance-junction to ambient drain-source avalanche ratings avalanche energy, single pulsed i d p d a w continuous drain current(v gs =10v) maximum power dissipation gate-source voltage maximum junction temperature storage temperature range diode continuous forward current mounted on large heat sink v n-channel mosfet absolute maximum ratings parameter common ratings (t a =25c unless otherwise noted) drain-source voltage ? power management ? switch applications features pin description sop-8 applications ? 60v/10a, r ds (on) =12m ? (typ.)@v gs =10v r ds (on) =14m ? (typ.)@v gs =4.5v ? super high dense cell design ? reliable and rugged ? lead free and green available d s g s s s g d d d d pin1
RU6010H min. typ. max. bv dss drain-source breakdown voltage 60 v 1 t j =125c 30 v gs(th) gate threshold voltage 1 3 v i gss gate leakage current 10 na 12 15 m ? 14 17 m ? v sd diode forward voltage 1.2 v t rr reverse recovery time 38 ns q rr reverse recovery charge 72 nc r g gate resistance 1.2 ? c iss input capacitance 1670 c oss output capacitance 340 c rss reverse transfer capacitance 145 t d(on) turn-on delay time 11 t r turn-on rise time 32 t d(off) turn-off delay time 29 t f turn-off fall time 16 q g total gate charge 23 q gs gate-source charge 6 q gd gate-drain charge 9 notes: ruichips semiconductor co., ltd rev. a? mar., 2016 2 www.ruichips.com nc pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. when mounted on 1 inch square copper board, t 10sec. the value in any given application depends on the user's specific board design. limited by t jmax . starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. test condition v dd =30v,i ds =10a, v gen =10v,r g =4.7 ? i sd =10a, dl sd /dt=100a/s v gs =0v, v ds =30v, frequency=1.0mhz v ds =48v, v gs =10v, i ds =10a i sd =10a, v gs =0v dynamic characteristics v gs =0v,v ds =0v,f=1mhz gate charge characteristics symbol i dss r ds(on) parameter zero gate voltage drain current drain-source on-state resistance unit a pf ns v ds =v gs , i ds =250a v gs =20v, v ds =0v v gs =10v, i ds =10a v gs =4.5v, i ds =6a diode characteristics electrical characteristics (t a =25c unless otherwise noted) RU6010H static characteristics v gs =0v, i ds =250a v ds =60v, v gs =0v
RU6010H device marking package packaging quantity reel size tape width RU6010H RU6010H sop-8 tape&reel 2500 13?? 12mm ruichips semiconductor co., ltd rev. a? mar., 2016 3 www.ruichips.com ordering and marking information
RU6010H ruichips semiconductor co., ltd rev. a? mar., 2016 4 www.ruichips.com typical characteristics 0 2 4 6 8 10 12 25 50 75 100 125 150 i d - drain current (a) t j - junction temperature ( c) drain current v gs =10v 0 5 10 15 20 25 30 012345678910 r ds(on) - on - resistance (m ? ) v gs - gate-source voltage (v) drain current i ds =10a 0 1 2 3 0 25 50 75 100 125 150 p d -power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d - drain current (a) v ds - drain-source voltage (v) safe operation area 10s 100s 1ms 10ms dc r ds(on) limited t a =25c 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 zthja - thermal response (c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r ja =50 c/w
RU6010H ruichips semiconductor co., ltd rev. a? mar., 2016 5 www.ruichips.com typical characteristics 0 5 10 15 20 012345 i d - drain current (a) v ds - drain-source voltage (v) output characteristics 1v 3v 5v 8v 10v 0 5 10 15 20 25 30 0 5 10 15 20 r ds(on) - on resistance (m ? ) i d - drain current (a) drain-source on resistance 10v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain-source on resistance v gs =10v i ds =10a t j =25c rds(on)=12m ? 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-drain voltage (v) source-drain diode forward t j =25c t j =150c 0 400 800 1200 1600 2000 2400 2800 1 10 100 c - capacitance (pf) v ds - drain-source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v gs - gate-source voltage (v) q g - gate charge (nc) gate charge v ds =48v i ds =10a
RU6010H ruichips semiconductor co., ltd rev. a? mar., 2016 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU6010H ruichips semiconductor co., ltd rev. a? mar., 2016 7 www.ruichips.com package information sop-8 min nom max min nom max a 1.300 1.525 1.750 0.051 0.060 0.069 a1 0.050 0.150 0.250 0.002 0.006 0.010 a2 1.300 1.450 1.550 0.051 0.057 0.061 b 0.330 0.420 0.510 0.013 0.017 0.020 c 0.170 * 0.260 0.007 * 0.010 d 4.700 4.900 5.100 0.185 0.193 0.201 e 3.700 3.900 4.100 0.146 0.154 0.161 e1 5.800 6.000 6.200 0.228 0.236 0.244 e 1.270 bsc 0.050 bsc l 0.400 0.835 1.270 0.016 0.033 0.050 0 * 8 0 * 8 symbol mm inch
RU6010H ruichips semiconductor co., ltd rev. a? mar., 2016 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park, nanshan district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
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